MJF6107 Datasheet, PDF (4/6 Pages) Motorola, Inc – PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS

MJF6107
2
1.6
TJ = 25°C
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4 V
0.4
VCE(sat) = IC/IB = 10
0
0.07 0.1
0.2 0.3 0.5
1
23
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
57
+ 2.5
+2
*APPLIES FOR IC/IB < hFE/4
+ 1.5
+1
+ 0.5
*θ_VC FOR VCE(sat)
0
– 0.5
+ 25°C to +150°C
– 55°C to + 25°C
–1
+ 25°C to +150°C
– 1.5
θ_VB FOR VBE
–2
– 55°C to + 25°C
– 2.5
0.07 0.1
0.2 0.3 0.5
1
23
IC, COLLECTOR CURRENT (AMP)
57
Figure 10. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101
100°C _25°C
100
10–1
REVERSE
10–2
IC = ICES
FORWARD
10–3
– 0.3 – 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut–Off Region
10 M
1M
100 k
10 k
IC = 10 x ICES
VCE = 30 V
IC = 2 x ICES
IC = ICES
1 k (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 11)
0.1 k
20
40
60
80
100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Effects of Base–Emitter Resistance
4
Motorola Bipolar Power Transistor Device Data