MJF6107 Datasheet, PDF (2/6 Pages) Motorola, Inc – PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _MJF6107
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCE = 80 Vdc, IB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (IC = 2 Adc, VCE = 4 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{DC Current Gain (IC = 7 Adc, VCE = 4 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (IC = 7 Adc, IB = 3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter On Voltage (IC = 7 Adc, VCE = 4 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
Current Gain–Bandwidth Product (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 500 mAdc, VCE = 4 Vdc, ftest = 1 MHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4 Vdc, f = 50 kHz)}
Symbol
Min
VCEO(sus)
70
ICES
—
ICEX
—
IEBO
—
hFE
30
5
VCE(sat)
—
VBE(on)
—
fT
4
Cob
—
hfe
20
Max
Unit
—
Vdc
1
µAdc
1
µAdc
1
µAdc
90
—
—
2
Vdc
2
Vdc
—
MHz
250
pF
—
—
v v NOTES:
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. fT = |hfe| • ftest.
VCC
+ 30 V
+11 V
0
25 µs
–9 V
RB
51
RC
SCOPE
D1
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
–4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 1. Switching Time Test Circuit
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07 0.1
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
td @ VBE(off) ≈ 5 V
0.2 0.3 0.5
1
23
IC, COLLECTOR CURRENT (AMP)
Figure 2. Turn–On Time
57
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.1
0.2 0.3 0.5
SINGLE PULSE
R_θJC(t) = r(t) R_θJC
TJ(pk) – TC = P(pk) R_θJC(t)
1
23 5
10
20 30 50 100 200 300 500 1K
t, TIME (ms)
Figure 3. Thermal Response
2K 3K 5K 10K
2
Motorola Bipolar Power Transistor Device Data