MJF6107 Datasheet, PDF (3/6 Pages) Motorola, Inc – PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS

15
10
50 µs
7
0.1 ms
5
0.5 ms
3
2
dc
1
0.7
0.5
0.3
0.2
0.15
1
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
2 3 5 7 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Active–Region Safe Operating Area
MJF6107
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
5
3
2
ts
1
0.7
0.5
0.3
tf
0.2
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
0.07
0.05
0.07 0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
Figure 5. Turn–Off Time
57
300
TJ = 25°C
200
Cib
100
70
Cob
50
30
0.5
1
23 5
10
20 30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
500
300
200
TJ = 150°C
100
70
25°C
50
30
20
– 55°C
VCE = 2 V
10
7
5
0.07 0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
57
2
1.6
IC = 1 A
1.2
TJ = 25°C
2.5 A
5A
0.8
0.4
0
10
20 30 50
100 200 300 500 1000
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
Motorola Bipolar Power Transistor Device Data
3