MTD20P03HDL Datasheet, PDF (3/12 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTD20P03HDL
40
TJ = 25°C
VGS = 10 V
6V
8V
5V
32
4.5 V
24
4V
16
3.5 V
8
3V
2.5 V
0
0
1
2
3
4
5
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
40
VDS ≥ 5 V
32
24
TJ = – 55°C
25°C
100°C
16
8
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.16
VGS = 5 V
0.14
0.12
TJ = 100°C
0.10
25°C
0.08
– 55°C
0.06
0 4 8 12 16 20 24 28 32 36 40
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.16
TJ = 25°C
0.14
0.12
0.10
VGS = 5 V
0.08
10 V
0.06
0 4 8 12 16 20 24 28 32 36 40
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.3
VGS = 5 V
ID = 10 A
1.2
1.1
1.0
0.9
0.8
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
VGS = 0 V
TJ = 125°C
10
100°C
1
04
8 12 16 20 24 28 32
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3