MTD20P03HDL Datasheet, PDF (2/12 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

MTD20P03HDL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (3) V(BR)DSS
30
—
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
(VGS = ±15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
(Cpk ≥ 2.0) (3) VGS(th)
1.0
—
Static Drain–to–Source On–Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 9.5 Adc)
(Cpk ≥ 2.0) (3) RDS(on)
—
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 19 Adc)
(ID = 9.5 Adc, TJ = 125°C)
VDS(on)
—
—
Forward Transconductance
(VDS = 8.0 Vdc, ID = 9.5 Adc)
gFS
5.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 15 Vdc, ID = 19 Adc,
VGS = 5.0 Vdc,
RG = 1.3 Ω)
(VDS = 24 Vdc, ID =19 Adc,
VGS = 5.0 Vdc)
td(on)
—
tr
—
td(off)
—
tf
—
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk ≥ 2.0) (3)
(IS = 19 Adc, VGS = 0 Vdc)
(IS = 19 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
Reverse Recovery Time
(See Figure 15)
(IS = 19 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
—
ta
—
tb
—
QRR
—
LD
—
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516 µA).
Typ
Max
Unit
Vdc
—
—
15
—
mV/°C
µAdc
—
10
—
100
nAdc
—
100
Vdc
1.5
2.0
4.0
—
mV/°C
mΩ
120
—
90
99
Vdc
0.94
2.2
—
1.9
mhos
6.0
—
770
1064
pF
360
504
130
182
18
25.2
ns
178
246.4
21
26.6
72
98
15
22.4
nC
3.0
—
11
—
8.2
—
Vdc
3.1
3.4
2.56
—
78
—
ns
50
—
28
—
0.209
—
µC
nH
4.5
—
nH
7.5
—
2
Motorola TMOS Power MOSFET Transistor Device Data