MTD20N06V Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTD20N06V
40
VGS = 10V
9V
35
8V
TJ = 25°C
30
7V
25
20
6V
15
10
5V
5
4V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
40
VDS ≥ 10 V
35
TJ = –55°C
25°C
30
25
100°C
20
15
10
5
0
2
3
4
5
6
7
8
9
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.18
0.16 ^{VGS = 10 V}
0.14
0.12
TJ = 100°C
0.1
0.08
25°C
0.06
– 55°C
0.04
0.02
0
0
5
10 15 20 25 30 35 40
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.11
TJ = 25°C
0.1
0.09
0.08
VGS = 10 V
0.07
0.06
15 V
0.05
0.04
0
5
10 15 20 25 30 35 40
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
1.75 ^{VGS = 10 V}
ID = 10 A
1.5
1.25
1
0.75
0.5
0.25
0
–50 –25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
35
VGS = 0 V
30
25
TJ = 125°C
20
15
10
5
100°C
0
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3