MTD20N06V Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MTD20N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (3)
V(BR)DSS
Vdc
60
—
—
—
69
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (3)
IDSS
IGSS
VGS(th)
µAdc
—
—
10
—
—
100
—
—
100
nAdc
Vdc
2.0
2.8
4.0
—
5.0
—
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(Cpk ≥ 2.0) (3)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
Forward Transconductance (VDS = 6.0 Vdc, ID = 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Ohm
—
0.065 0.080
Vdc
—
—
2.0
—
—
1.9
6.0
8.0
—
mhos
—
590
830
pF
—
180
250
—
40
80
—
8.7
20
ns
—
77
150
—
26
50
—
46
90
—
28
40
nC
—
4.0
—
—
9.0
—
—
8.0
—
Vdc
—
1.05
1.6
—
0.96
—
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
—
60
—
ns
—
52
—
—
8.0
—
—
0.172
—
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
nH
—
3.5
—
—
4.5
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
nH
—
7.5
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk = _{3 x SIGMA}
2
Motorola TMOS Power MOSFET Transistor Device Data