MTB3N120E Datasheet, PDF (3/12 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 1200 VOLTS

TYPICAL ELECTRICAL CHARACTERISTICS
MTB3N120E
6
TJ = 25°C
5
VGS ₌ 10 V
6
VDS ≥ 10 V
5
4
6V
4
100°C
3
3
2
5V
1
4V
0
0
6
12
18
24
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2
25°C
1
TJ = – 55°C
0
3 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
VGS = 10 V
6
TJ = 100°C
4
25°C
2
– 55°C
0
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
5.4
TJ = 25°C
5.0
4.6
4.2
VGS = 10 V
15 V
3.8
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
2.0 ^{ID = 1.5 A}
1.5
1.0
0.5
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10,000
VGS = 0 V
1,000
100
10
TJ = 125°C
100°C
25°C
1
0
200
400
600
800
1000 1200
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3