MTB3N120E Datasheet, PDF (2/12 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 1200 VOLTS

MTB3N120E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 1200 Vdc, VGS = 0 Vdc)
(VDS = 1200 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 600 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 600 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
1200
—
—
—
—
2.0
—
—
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
1.28
—
—
—
3.0
7.1
4.0
—
—
3.1
2130
1710
932
13.6
12.6
35.8
20.7
31
8.0
11
14
0.80
0.65
394
118
276
2.11
4.5
7.5
Max
Unit
—
Vdc
—
mV/°C
µAdc
10
100
100
nAdc
4.0
Vdc
—
mV/°C
5.0
Ohm
Vdc
18.0
15.8
—
mhos
2980
pF
2390
1860
30
ns
30
70
40
40
nC
—
—
—
Vdc
1.0
—
—
ns
—
—
—
µC
—
nH
—
2
Motorola TMOS Power MOSFET Transistor Device Data