MRF857S Datasheet, PDF (3/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

R1
R2
R3
INPUT
VCE
+
C1
R8
F1
V_SUPPLY
Q1
Q2
R9
R4 ^R5
R7
R6
TL2
TL1
C10
TL3
B1
+
C2
C3 ^B2
C4
B3
L1
TL6
C5
C7
C6
TL7
L2
DUT
TL5
TL9 ^TL8
TL10
C11
R10
B4
+
C8
C9
TL11
TL14
C12 _TL16
TL13
TL12
TL15
TL4
OUTPUT
B1, B4
B2, B3
C1
C2, C8
C3, C9
C4, C7
C5, C6
C10, C12
C11
F1
L1, L2
Q1
Q2
Long Ferrite Bead, Fair Rite (2743021447)
Short Ferrite Bead, Fair Rite (2743019447)
250 F, 50 Vdc Electrolytic Capacitor
10 F, 50 Vdc Electrolytic Capacitor
0.1 F, Chip Capacitor
1000 pF, Chip Capacitor
100 pF, Chip Capacitor
43 pF, 100 Mil Chip Capacitor
0.8–8 pF, Johansen Gigatrim
1 A Micro–Fuse
5 Turns, 20 AWG, 0.126 ID, 46.2 nH
MMBT2222ALT1, NPN Transistor
BD136, PNP Transistor
R1
R2
R3
R4
R5
R6
R7
R8
R9, R10
TL1 – TL16
V_Supply
VCE
Board
330 , 1/4 W
500 Potentiometer, 1/4 W
4.7K , 1/4 W
2 x 4.7K , 1/4 W
47 , 2 W
75 , 1/4 W
4.7 , 1/4 W
10 , 3 W
4 x 39 , 1/8 W Chip Resistors in Parallel
Microstrip Transmission Line
+ 27 Vdc 0.5 V Due to Resistor Tolerance
+ 24 Vdc @ 0.3 A
0.030 Glass–Teflon 2 oz. Cu, _r = 2.55
Figure 1. MRF857S Class A RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
MRF857S
3