MRF857S Datasheet, PDF (1/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Order this document
by MRF857/D
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 – 960 MHz.
Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = + 43 dBm
Typical Noise Figure = 5.25 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 – 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 0.4 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CLASS A
800 – 960 MHz
2.1 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 305D–01, STYLE 1
MAXIMUM RATINGS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Rating
Total Device Dissipation @ TC = 50 C
Derate above 50 C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (TJ = 150 C, TC = 50 C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
R _JC
Symbol
Min
V(BR)CEO
28
V(BR)CES
55
V(BR)CBO
55
V(BR)EBO
4
ICES
—
Value
30
55
4
17
0.114
200
– 65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/ C
C
C
Max
Unit
8.4
C/W
Typ
Max
Unit
35
—
Vdc
85
—
Vdc
85
—
Vdc
5
—
Vdc
—
1
mA
(continued)
REV 3
MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF857S
1