MRF857S Datasheet, PDF (2/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS — continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz,
Power Output = 2.1 W)
Load Mismatch
(Po = 2.1 W)
(VCE = 24 V, IC = 0.3 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.3 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.3 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = – 40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.3 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz,
Power Output = 2.1 W)
Symbol
Min
Typ
Max
Unit
hFE
30
60
120
—
Cob
2.4
3.3
4.4
pF
Pg
12.5
13.5
—
dB
Pin(over)
ITO
No Degradation in
Output Power
—
—
0.4
+ 43
+ 44.5
—
W
dBm
NF
—
5.25
—
dB
IRL
—
– 15
–10
dB
VCE
(V)
24
IC
f
(A) (MHz)
0.3
800
820
840
860
880
900
920
940
960
Table 1. MRF857S Common Emitter S–Parameters
S11
|S11|
0.915
165
0.915
165
0.915
165
0.913
164
0.914
164
0.914
163
0.913
163
0.915
162
0.916
162
S21
|S21|
2.098
54
2.049
53
1.991
52
1.951
51
1.912
50
1.865
49
1.832
48
1.783
47
1.748
46
S12
|S12|
0.037
58
0.038
58
0.038
58
0.039
59
0.040
59
0.041
59
0.042
59
0.043
59
0.043
59
S22
|S22|
0.343
0.345
0.349
0.352
0.355
0.359
0.362
0.366
0.369
–157
–157
–157
–158
–158
–158
–158
–159
–159
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
840
870
900
Zin
(Ohms)
1.5
4.4
1.7
4.7
1.5
4.8
18.4
18.0
14.9
ZOL*
(Ohms)
– 26.3
– 26.1
– 26.2
VCE = 24 V, IC = 0.3 A, Po = 2.1 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF857S
2
MOTOROLA RF DEVICE DATA