MRF652 Datasheet, PDF (3/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

10
10
f = 440 MHz
8
8
6
6
512 MHz
4
4
Pin = 1 W
0.5 W
0.25 W
2
VCC = 12.5 V
2
VCC = 12.5 V
0
0
0.2
0.4
0.6
0.8
1
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
0
440
460
480
500
520
f, FREQUENCY (MHz)
Figure 3. Output Power versus Frequency
10
Pin = 1 W
8
6
0.5 W
4
0.25 W
2
f = 512 MHz
0
6
8
10
12
14
16
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
8
Pout
6
80
η
70
4
60
2
Pin = 0.5 W
VCC = 12.5 V
VSWR
0
440
460
480
500
f, FREQUENCY (MHz)
50
2:0 ₄₀
1:5
1:1
520
Figure 5. Typical Broadband Circuit Performance
1
2
3
0
1
Zin 470 ₂
512
1.0
3
f = 400 MHz
2.0 ₄₄₀
3.0
4.0
Zo = 10 Ω
5.0
6.0
470 ₅₁₂
7.0
ZOL*
8.0
9.0
10
440
f = 400 MHz
VCC = 12.5 Vdc
Pout = 5.0 W
f
Zin
MHz
Ohms
ZOL*
Ohms
400
1.18 + j0.54
6.7 – j6.9
440
1.19 + j0.88
7.05 – j6.1
470
1.19 + j1.11
7.6 – j5.1
512
1.19 + j1.35
8.1 – j4.1
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
Figure 6. Series Equivalent Input/Output Impedance
MOTOROLA RF DEVICE DATA
MRF652 MRF652S
3