MRF652 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
9.5
15
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 5.0 W)
f = 512 MHz
Gpe
10
11
—
dB
f = 870 MHz
—
6.0
—
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 5.0 W, f = 512 MHz)
η
60
65
—
%
Load Mismatch
(VCC = 15.5 Vdc, Pin = 500 mW, f = 512 MHz,
VSWR = 30:1, At All Phase Angles)
ψ
No Degradation in Output Power
B2 B3
+12.5 Vdc
+
C6
C7 C9
–
GRD
Z1
C1
C2
L2
C4
D.U.T.
C8
Z2
Z3
Z4
Z5
L1
C3
C5
B1
C10
C11
C12
B1, B2, B3 — Ferrite Bead
C1 — 7.0 pF Unelco Mica
C2 — 1.0 – 6.0 pF Johanson Variable 5201
C3 — 15 pF Unelco Mica
C4 — 43 pF Mini–Underwood Mica
C5 — 56 pF Mini–Underwood Mica
C6 — 1000 pF Unelco Mica
C7 — 0.1 µF Ceramic
C8 — 68 pF Mini–Underwood Mica
C9 — 1.0 µF Electrolytic 25 V
C10, C11 — 5.0 pF Unelco Mica
C12 — 1.0 – 10 pF Johanson Variable 5501
L1, L2 — 6 Turns, 20 AWG Wire 0.125″ ID
Z1, Z2 — 25 Ohm µStripline
Z3, Z4, Z5 — 50 Ohm µStripline
Board — 0.032″ Glass–Teflon
Figure 1. 440 – 512 MHz Broadband Test Circuit
MRF652 MRF652S
2
MOTOROLA RF DEVICE DATA