MRF652 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistors
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ)
• Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB
• Series Equivalent Large–Signal Characterization
• Gold Metallized, Emitter Ballasted for Long Life and Reliability
• Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
16
36
4.0
2.0
25
143
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Symbol
Max
R_θJC
7.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
16
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
36
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
36
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
ICES
—
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
10
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
Order this document
by MRF652/D
MRF652
MRF652S
5.0 W, 512 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 244–04, STYLE 1
MRF652
CASE 249–06, STYLE 1
MRF652S
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
1.0
mAdc
—
150
—
(continued)
MRF652 MRF652S
1