MRF577T1 Datasheet, PDF (3/12 Pages) Motorola, Inc – The RF Small Signal Line NPN Silicon High-Frequency Transistor

TYPICAL CHARACTERISTICS
8
7
VCE = 6 V
6
5
VCE = 3 V
4
3
2
1
0
1
23 5
10
20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 2. f_τ, Current–Gain Bandwidth Product
versus Collector Current
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
01
23 45 678
VCB, COLLECTOR–BASE VOLTAGE (Vdc)
9 10
Figure 3. Collector–Base Capacitance
versus Voltage
4
300
3.5
250
3
200
PD(max) = 232 mW
2.5
2
150
1.5
100
1
50
0.5
0
0
0.5
1
1.5
2
2.5
3
VEB, EMITTER–BASE VOLTAGE (Vdc)
Figure 4. Input Capacitance versus
Emitter–Base Voltage
0
0
25
50
75
100 125 150 200
TC, CASE TEMPERATURE (°C)
Figure 5. Maximum Power Dissipation versus
Collector Lead Temperature (TC)
35
30
VCE = 3 V
IC = 20 mA
25
20
|S21|2
GUmax
15
10
5
0
0.1
0.3 0.5
1
23 5
10
f, FREQUENCY (GHz)
Figure 6. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
35
30
GUmax
25
20
|S21|2
VCE = 6 V
IC = 40 mA
15
10
5
0
0.1
0.3 0.5
1
23 5
10
f, FREQUENCY (GHz)
Figure 7. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF577T1
3