MRF577T1 Datasheet, PDF (1/12 Pages) Motorola, Inc – The RF Small Signal Line NPN Silicon High-Frequency Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Small Signal Line
NPN Silicon
High-Frequency Transistor
Designed for low noise, wide dynamic range front end amplifiers at
frequencies to 1.5 GHz. Specifically aimed at portable communication devices
such as pagers and hand–held phones.
• Low Noise Figure
NF = 1.5 dB (Typ) @ 1.0 GHz
• High Current Gain–Bandwidth Product (f_τ = 7.0 GHz Typ @ 6.0 V, 40 mA)
• Small, Surface–Mount Package (SC–70/SOT–323)
• Available in Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
Order this document
by MRF577T1/D
MRF577T1
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419–02, STYLE 3
(SC–70/SOT–323)
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Tstg
Operating Temperature Range
TJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction–to–Case (1)
DEVICE MARKING
R_θJC
MRF577T1 = D
(1) Case temperature measured on the collector lead immediately adjacent to body of package.
Value
10
20
3.0
80
232
3.1
– 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Value
323
Unit
°C/W
© MMoOtoTroOlaR, InOc.L1A99R7 F DEVICE DATA
MRF577T1
1