MRF577T1 Datasheet, PDF (2/12 Pages) Motorola, Inc – The RF Small Signal Line NPN Silicon High-Frequency Transistor

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0 mA)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 50 µA, IC = 0)
Collector Cutoff Current
(VCB = 8.0 Vdc, IE = 0)
V(BR)CEO
10
12
—
Vdc
V(BR)CBO
20
—
—
Vdc
V(BR)EBO
2.5
—
—
Vdc
ICBO
—
—
10
µA
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vdc, IC = 30 mA)
hFE
50
—
300
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
Current–Gain Bandwidth Product
(VCE = 6.0 Vdc, IE = 40 mA, f = 1.0 GHz)
Ccb
—
0.85
—
pF
f_τ
—
7.0
—
GHz
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
Associated Gain at Minimum Noise Figure
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
Maximum Unilateral Gain
(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)
Insertion Gain
(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)
Noise Resistance
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz)
500 MHz
NFmin
—
1.0
—
dB
1.0 GHz
—
1.5
—
500 MHz
GNF
—
15
—
dB
1.0 GHz
—
10
—
GUmax
—
12
—
dB
|S212|
—
11
—
dB
RN
—
6.0
—
Ohms
RF INPUT
VCE
VBE
*BIAS **SLUG TUNER
NETWORK
DUT
**SLUG TUNER *BIAS
NETWORK
Figure 1. Functional Circuit Schematic
RF OUTPUT
*HP11590B
**MICROLAB/FXR
**SF – 11N < 1 GHz
**SF – 31IN ≥ 1 GHz
MRF577T1
2
MOTOROLA RF DEVICE DATA