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MRF175LU Datasheet, PDF (3/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FETs | |||
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BIAS
C9
.01 mf
R2
R1
C1
IN
L1
Z1
C2
C3
C4
C11 C12
L3
C13 C14
+v
L2
Z2
GND
C8
Z3
OUT
D.U.T.
C5
C6
C7
C1, C8 â 270 pF ATC Chip Cap
C2, C4, C6, C7 â 1.0 â 20 pF Trimmer Cap
C3 â 15 pF Mini Unelco Cap
C5 â 33 pF Mini Unelco Cap
C9, C12 â 0.1 µF Ceramic Cap
C11, C14 â 680 pF Feed Thru Cap
C13 â 50 µF Tantalum Cap
L1 â Hairpin Inductor #18 Wire
0.25â³
0.4â³
L2 â 12 Turns #18 Wire 0.450â³ ID
L3 â Ferroxcube VK200 20/4B
Figure 2. 400 MHz Test Circuit
R1 â 10 k 1/4 W Resistor
R2 â 1 k 1/4 W Resistor
R3 â 1.5 k 1/4 W Resistor
Z1 â Microstrip Line 0.950â³ x 0.250â³
Z2 â Microstrip Line 1â³ x 0.250â³
Z3 â Microstrip Line 0.550â³ x 0.250â³
Board Material â 0.062â³ Teflon â
fiberglass, εr = 2.56, 1 oz. copper
clad both sides
TYPICAL CHARACTERISTICS
4000
100
3000
VDS = 20 V
2000
10
10 V
1000
0
0
0 2 4 6 8 10 12 14 16 18 20
0
ID, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
TC = 25°C
10
100
ID, DRAIN CURRENT (AMPS)
Figure 4. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
MRF175LU MRF175LV
3
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