MRF175LU Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF175LU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 400 MHz. The high power, high gain and
broadband performance of each device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175LU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 100 Watts
Power Gain — 10 dB Typ
Efficiency — 55% Typ
MRF175LV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 100 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
D
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low Crss — 20 pF Typ @ VDS = 28 V
G
MRF175LU
MRF175LV
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER FETs
S
CASE 333–04, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
65
Vdc
VGS
± 40
Vdc
ID
13
Adc
PD
270
Watts
1.54
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
0.65
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
65
IDSS
—
IGSS
—
—
—
Vdc
—
2.5
mAdc
—
1.0
µAdc
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF175LU MRF175LV
1