MRF175LU Datasheet, PDF (2/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FETs

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
DYNAMIC CHARACTERISTICS
VGS(th)
1.0
3.0
6.0
Vdc
VDS(on)
0.1
0.9
1.5
Vdc
gfs
2.0
3.0
—
mhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
180
—
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
200
—
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
20
—
pF
FUNCTIONAL CHARACTERISTICS — MRF175LV (Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
Gps
12
14
—
dB
η
55
65
—
%
ψ
No Degradation in Output Power
FUNCTIONAL CHARACTERISTICS — MRF175LU (Figure 2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
Gps
8.0
10
—
dB
η
50
55
—
%
ψ
No Degradation in Output Power
BIAS
RF INPUT
R1
C4
C1
C2
C5
L1
C3
R2
L4
C10
L2
RFC1
C11
L3
C6
C7
C9
C8
+28 Vdc
RF OUTPUT
D.U.T.
C1, C2, C8 — Arco 463 or Equivalent
C3, C7 — 25 pF Unelco Cap
C4 — 1000 pF Chip Cap
C5 — 0.01 µF Chip Cap
C6 — 250 pF Unelco Cap
C9 — Arco 462 or Equivalent
C10 — 1000 pF ATC Chip Cap
C11 — 10 µF 100 V Electrolytic
L1 — Hairpin Inductor #18 Wire
0.32″
0.15″
L2 — Stripline Inductor 0.200″ x 0.500″
Figure 1. 225 MHz Test Circuit
L3 — Hairpin Inductor #16 Wire
0.45″
0.2″
L4 — 2 Turns #16 Wire 5/16″ ID
RFC1 — VK200–4B
R1 — 1.0 k 1/4 W Resistor
R2 — 100 Ω Resistor
MRF175LU MRF175LV
2
MOTOROLA RF DEVICE DATA