MMDF3200Z Datasheet, PDF (3/4 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
0.5
—
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 11.5 Adc)
(VGS = 2.5 Vdc, ID = 5.9 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 8.0 Vdc, ID = 3.0 Adc)
gFS
5.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 16 Vdc, ID = 11.5 Adc,
VGS = 4.5 Vdc,
RG = 10 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 11.5 Adc,
VGS = 4.5 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 11.5 Adc, VGS = 0 Vdc)
VSD
—
(IS = 11.5 Adc, VGS = 0 Vdc, TJ = 125°C)
—
Reverse Recovery Time
trr
—
(IS = 11.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
—
TBD
—
—
TBD
0.8
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
MMDF3200Z
Max
Unit
Vdc
—
—
mV/°C
µAdc
1.0
10
1.0
mA
Vdc
1.2
—
mV/°C
mΩ
15
25
—
Mhos
TBD
pF
TBD
TBD
TBD
ns
TBD
TBD
TBD
TBD
nC
—
—
—
1.2
Vdc
—
—
ns
—
—
—
µC
Motorola TMOS Power MOSFET Transistor Device Data
3