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MMDF3200Z Datasheet, PDF (1/4 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMDF3200Z/D
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Medium Power Surface Mount Products
TMOS Dual N-Channel
â¢
Field Effect Transistors
WaveFET⢠devices are an advanced series of power MOSFETs which utilize Motorolaâs
latest MOSFET technology process to achieve the lowest possible onâresistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drainâtoâsource diode has a very low reverse recovery time. WaveFETâ¢
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcâdc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
⢠Zener Protected Gates Provide Electrostatic
Discharge Protection
⢠Designed to withstand 200 V Machine Model
and 2000 V Human Body Model
⢠Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
⢠Logic Level Gate Drive â Can Be Driven by
Logic ICs
⢠Miniature SOâ8 Surface Mount Package â
Saves Board Space
⢠Diode Is Characterized for Use In Bridge Circuits
⢠Diode Exhibits High Speed, With Soft Recovery
⢠IDSS Specified at Elevated Temperature
⢠Mounting Information for SOâ8 Package Provided
7 8 N1âDRAIN
N1âGATE
2
1
N1âSOURCE
5 6 N2âDRAIN
MMDF3200Z
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
11.5 AMPERES
20 VOLTS
RDS(on) = 0.015 OHM
CASE 751â06, Style 11
SOâ8
N1âSource
N1âGate
N2âSource
N2âGate
18
27
36
45
TOP VIEW
N1âDrain
N1âDrain
N2âDrain
N2âDrain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage â Continuous
Operating and Storage Temperature Range
N2âGATE
4
3
N2âSOURCE
Symbol
Max
Unit
VDSS
20
V
VDGR
20
V
VGS
± 12
V
TJ, Tstg â 55 to 150 °C
DEVICE MARKING
ORDERING INFORMATION
D3200
Device
MMDF3200Z
Reel Size
13â³
Tape Width
12 mm embossed tape
Quantity
4000 units
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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