MMDF3200Z Datasheet, PDF (2/4 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

MMDF3200Z
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ 10 Seconds)
Parameter
Symbol Maximum
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current ⁽¹⁾
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
ID
11.5
ID
9.2
IDM
57.5
PD
2.0
16
Thermal Resistance — Junction to Ambient
Continuous Source Current (Diode Current)
R_θJA
IS
62.5
TBD
Unit
A
A
A
Watts
mW/°C
°C/W
A
When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ Steady State)
Parameter
Symbol Maximum
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current ⁽¹⁾
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
ID
8.0
ID
5.9
IDM
40
PD
1.28
10.2
Thermal Resistance — Junction to Ambient
Continuous Source Current (Diode Current)
R_θJA
IS
98
TBD
Unit
A
A
A
Watts
mW/°C
°C/W
A
When mounted on minimum FR–4 or G–10 board (VGS = 10 V @ Steady State)
Parameter
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current ⁽¹⁾
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Thermal Resistance — Junction to Ambient
Continuous Source Current (Diode Current)
(1) Repetitive rating; pulse width limited by maximum junction temperature.
Symbol
ID
ID
IDM
PD
R_θJA
IS
Maximum
7.1
5.2
35.5
0.75
6.0
166
TBD
Unit
A
A
A
Watts
mW/°C
°C/W
A
2
Motorola TMOS Power MOSFET Transistor Device Data