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MMDF2N05ZR2 Datasheet, PDF (3/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS
TYPICAL ELECTRICAL CHARACTERISTICS
MMDF2N05ZR2
4
VGS = 10 V
3.5 TJ = 25°C
3
2.5
7 V 6.5 V
6.0 V
5.5 V
2
5.0 V
1.5
1
0.5
0
0 0.2 0.4 0.6 0.8
4.3 V
3.9 V
1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
4
3.5
VDS ≥ 10 V
TJ = 25°C
3
2.5
2
100°C
1.5
25°C
1
0.5
TJ = –55°C
0
2.5 3 3.5 4 4.5 5 5.5 6 6.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.2
ID = 1.5 A
1.0
TJ = 25°C
0.8
0.6
0.4
0.2
0
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
0.65
TJ = 25°C
0.45
VGS = 5.0 V
0.25
10 V
0.05
0 0.5 1 1.5 2 2.5 3 3.5 4
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 1 A
1.5
1.0
100
VGS = 0 V
10
1
TJ = 125°C
100°C
25°C
0.5
0.1
0
– 50 – 25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On–Resistance Variation
with Temperature
0.01
0
5 10 15 20 25 30 35 40 45 50
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3