MMDF2N05ZR2 Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2N05ZR2/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs™ are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density TMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in ^G
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MMDF2N05ZR2
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
2.0 AMPERES
50 VOLTS
RDS(on) = 0.300 OHM
™
D
CASE 751–05, Style 11
SO–8
S
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Temperature for Soldering Purposes
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R_θJA
TL
Value
50
50
± 15
2.0
1.7
8.0
2.0
– 55 to 150
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
°C/W
°C
DEVICE MARKING
D2N05Z
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2N05ZR2
13″
12 mm embossed tape
2500 units
(1) When mounted on G10/FR–4 glass epoxy board using minimum recommended footprint.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
REV 1
©^MM^oot^to^oro^rola^l,^aIn^Tc.^M19^O9^S7 ^{Power MOSFET Transistor Device Data}
1