MMDF2N05ZR2 Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS

MMDF2N05ZR2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (3)
V(BR)DSS
Vdc
50
56
—
—
55
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 55°C)
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (3)
IDSS
IGSS
VGS(th)
µAdc
—
—
2.0
—
—
25
—
0.14
0.5
Vdc
2.0
3.0
4.0
—
–5.0
—
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 5.0 Vdc, ID = 0.6 Adc)
(Cpk ≥ 2.0) (3)
RDS(on)
mΩ
—
200
300
—
350
500
Forward Transconductance
(VDS = 15 Vdc, ID = 2.5 Adc)
gFS
mMhos
—
2.0
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
104
—
pF
—
58
—
—
16
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 0.6 Adc,
VGS = 10 Vdc,
RG = 25 Ω)
td(on)
tr
td(off)
tf
—
24
48
ns
—
46
92
—
130
260
—
71
142
Gate Charge
(see figure 8)
(VDS = 25 Vdc, ID = 1.3 Adc,
VGS = 10 Vdc)
QT
—
3.3
4.6
nC
Q1
—
0.7
—
Q2
—
1.3
—
Q3
—
1.4
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
Vdc
—
0.82
1.4
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
—
66
—
ns
—
23
—
—
43
—
—
0.08
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data