MMBR951ALT1 Datasheet, PDF (3/16 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MRF9511LT1
MMBR951LT1
MMBR951ALT1
MRF957T1
Unit
Min Typ Max Min Typ Max Min Typ Max
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
|S21|2
dB
— 14.5 — — 12.5 — — 13.3 —
— 9.0 — — 7.0 — — — —
— — — — — — — 10.1 —
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
GU _max
dB
— 17 — — 14 — — 14 —
— 10.5 — — 8.0 — — — —
— — — — — — — 10.8 —
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
NFMIN
dB
— 1.3 — — 1.3 — — 1.5 —
— 2.1 — — 2.1 — — — —
— — — — — — — 2.0 —
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
GNF
dB
— 14 — — 13 — — 11.8 —
— 9.0 — — 7.5 — — — —
— — — — — — — 9.0 —
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NF50 _Ω — 1.9 2.8 — 1.9 2.8 — 1.9 2.8 dB
NOTE:
1. Maximum
Unilateral
Gain
is
GUmax
=
|S21|2
(1 – |S11|2)(1 – |S22|2)
MOTOROLA RF DEVICE DATA
MMBR951 MRF957 MRF9511 SERIES
3