MMBR951ALT1 Datasheet, PDF (11/16 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

VCE
(Vdc)
6.0
IC
(mA)
5.0
f
(MHz)
NFmin
(dB)
Γ_o
(MAG, ANG)
1000
1500
1.7
0.27 ∠ 97
2.0
0.21 ∠ 54
Table 3. MRF957T1 Typical Noise Parameters
rN
(ohms)
0.2
0.28
TYPICAL CHARACTERISTICS
MRF957T1
3
2
Cib
1
0.5
Cob
Ccb
0.2
0.1
1
2
5
10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance versus Voltage
200
VCE = 6 V
100
50
20
10
1
2
5
10
20 30
100
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain versus Collector Current
MOTOROLA RF DEVICE DATA
MMBR951 MRF957 MRF9511 SERIES
11