MMBR951ALT1 Datasheet, PDF (12/16 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

10
VCE = 5 V
f = 1 GHz
8
TYPICAL CHARACTERISTICS
MRF957T1
20
16
GNF
6
12
VCE = 6 V
4
8
f = 1 GHz
3
2
4
2
NF
1
0
0.1
1
10
100
1
2
5
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 16. Gain–Bandwidth Product versus
Collector Current
Figure 17. Associated Gain versus
Collector Current
32
25
5
28
VCE = 6 V
24
IC = 5 mA
20
GNF
4
20
15
3
16
MSG
12
10
2
8
5
4
|S21|2
0
0.1
0.2 0.3 0.5
1
0
23
5.1
0.3
f, FREQUENCY (GHz)
NF
0.5
f, FREQUENCY (GHz)
VCE = 6 V 1
IC = 5 mA
0
1
1.5
Figure 18. Insertion Gain and Maximum
Stable Power Gain versus Frequency
Figure 19. Noise Figure and Associated
Gain versus Frequency
VCE = 6.0 V IC = 5.0 mA
f NF
j1.0
(GHz) OPT
Γ_o ^{RN K}
1.0 1.5 dB 0.27 ∠ 97° 10 0.91 ^j0.5
INPUT
j0.2 •15.2
15.0
14.0
Γ_o
•^1.5
2.0
2.3
– j0.2
VCE = 6.0 V IC = 5.0 mA
f NF
(GHz) OPT
j2.0
Γ_o ^{RN K}
1.5 2.0 dB 0.21 ∠ 54° 14 1.02
j0.5
OUTPUT
j0.2
•Γms
11.8
11.0
10.0
– j0.2
j1.0
j2.0
•^Γ_2o.0
2.5
3.0
AREA OF INSTABILITY
– j0.5
– j1.0
– j2.0
0.2 0.5 1
2
Figure 20. Constant Gain and Noise Figure Contours
f = 1.0 GHz
– j0.5
– j2.0
– j1.0
0.2 0.5 1
2
Figure 21. Constant Gain and Noise Figure Contours
f = 1.5 GHz
MMBR951 MRF957 MRF9511 SERIES
12
MOTOROLA RF DEVICE DATA