MMBR911LT1 Datasheet, PDF (3/6 Pages) Motorola, Inc – NPN Silicon High-Frequency Transistor

2.5
2
1.5
Cib
1
0.5
f = 1 MHz
0
0
1
2
3
VBE, BASE–EMITTER VOLTAGE (Vdc)
Figure 2. Input Capacitance versus
Base–Emitter Voltage
20
f = 500 MHz
16
12
1 GHz
8
4
VCE = 10 V
0
0
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 4. Gain at Noise Figure versus
Collector Current
25
5
20
4
GNF
15
3
NF
10
2
5
0
0.2
0.3
0.5
1
f, FREQUENCY (GHz)
VCE = 10 V ¹
IC = 10 mA
0
1.5
2
Figure 6. Gain at Noise Figure and Noise
Figure versus Frequency
2.5
f = 1 MHz
2
1.5
1
Cob
0.5
Ccb
0
01
2 34 5 6 7 8
Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
9 10
Figure 3. Output Capacitances versus
Collector–Base Voltage
5
4
f = 1 GHz
3
2
500 MHz
VCE = 10 V
0
0
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 5. Noise Figure versus Collector Current
30
VCE = 10 V
25
IC = 30 mA
20
GUMAX
15
|S21|2
10
5
0.2
0.3
0.5
1
f, FREQUENCY (GHz)
1.5 2
Figure 7. Maximum Unilateral Gain and
Insertion Gain versus Frequency
MOTOROLA RF DEVICE DATA
MMBR911LT1
3