MMBR911LT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – NPN Silicon High-Frequency Transistor

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
V(BR)CEO
12
—
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
—
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
2.0
—
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
—
—
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VCE = 10 Vdc)
hFE
30
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
—
Current Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)
fT
—
6.0
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
GNF
f = 0.5 GHz
—
17
f = 1.0 GHz
—
11
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
NF
f = 0.5 GHz
f = 1.0 GHz
—
2.0
—
2.9
10
8
6
4
2
VCE = 10 V
f = 1 GHz
0
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 1. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
200
—
1.0
pF
—
GHz
dB
—
—
dB
—
—
MMBR911LT1
2
MOTOROLA RF DEVICE DATA