MMBR911LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – NPN Silicon High-Frequency Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
Motorola small–signal plastic transistor offers superior quality and performance
at low cost.
• High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
• Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
• High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
• State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
Order this document
by MMBR911LT1/D
MMBR911LT1
IC = 60 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Power Dissipation @ Tcase = 75°C (1)
Derate linearly above Tcase = 75°C
Storage Temperature
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
Tstg
TJmax
Symbol
R_θJC
DEVICE MARKING
MMBR911LT1 = 7P
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Value
12
20
2.0
60
333
4.44
– 55 to +150
150
Value
225
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
°C
°C
Unit
°C/W
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MMBR911LT1
1