MMBFU310LT1 Datasheet, PDF (3/6 Pages) Motorola, Inc – JFET Transistor

30
3.0
24 ^{VDS = 10 V}
ID = 10 mA
TA = 25°C
18
2.4
Y11
1.8
12
Y21
1.2
6.0
Y22
0.6
Y12
0
100
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 6. Common–Gate Y Parameter
Magnitude versus Frequency
θ_21, θ₁₁
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
130° 0°
100
θ_12, θ₂₂
– 20° 87°
θ₂₂
– 20°
– 40° 86°
θ₂₁
– 60°
– 80° 85°
– 100°
θ₁₂
– 120° 84°
θ₁₁
VDS = 10 V
ID = 10 mA
TA = 25°C
– 140°
– 160° 83°
– 180°
200 300
– 200° 82°
500 700 1000
f, FREQUENCY (MHz)
Figure 8. Common–Gate Y Parameter
Phase–Angle versus Frequency
MMBFU310LT1
|S21|, |S11|
0.85 0.45
|S12|, |S22|
0.060 1.00
0.79 0.39
0.73 0.33
0.67 0.27
VDS = 10 V
ID = 10 mA
TA = 25°C
S22
S21
0.048 0.98
0.036 0.96
0.024 0.94
0.61 0.21
S11
0.012 0.92
0.55 0.15
100
S12
0.90
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 7. Common–Gate S Parameter
Magnitude versus Frequency
θ_11, θ₁₂
– 20° 120°
θ₁₁
– 40° 100° ^θ21
θ₂₂
θ_21, θ₂₂
0
– 20°
– 60° 80°
– 40°
– 80° 60°
θ₁₂
– 100° 40°
– 120° 20°
100
θ₂₁ – 60°
VDS = 10 V
ID = 10 mA
θ₁₁
TA = 25°C
200 300 500 700
f, FREQUENCY (MHz)
– 80°
– 100°
1000
Figure 9. S Parameter Phase–Angle
versus Frequency
8.0
24
7.0 ^{VDD = 20 V}
21
f = 450 MHz
6.0 ^{BW ≈ 10 MHz}
18
CIRCUIT IN FIGURE 1
5.0
15
Gpg
4.0
12
NF
3.0
9.0
2.0
6.0
1.0
3.0
0
0
4.0 6.0 8.0 10 12 14 16 18 20 22 24
ID, DRAIN CURRENT (mA)
Figure 10. Noise Figure and
Power Gain versus Drain Current
7.0
6.0
5.0
4.0 VDS = 10 V
ID = 10 mA
3.0 TA = 25°C
CIRCUIT IN FIGURE 1
2.0
Gpg
NF
1.0
0
50
100 200 300
f, FREQUENCY (MHz)
26
22
18
14
10
6.0
2.0
500 700 1000
Figure 11. Noise Figure and Power Gain
versus Frequency
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3