MMBFU310LT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – JFET Transistor

MMBFU310LT1
50 Ω
SOURCE
U310
C3
L1 _C1
C5
L2P
C2
C6
50 Ω
LOAD
L2S
C4
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
70
70
60
VDS = 10 V
50
IDSS
40
+ 25°C
60
TA = – 55°C
50
+ 25°C
40
30
+150°C ³⁰
20
+ 25°C
20
– 55°C
10
+150°C ¹⁰
0
–5.0
–4.0
–3.0
–2.0
–1.0
0
ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)
IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
35
30 _{VDS = 10 V}
f = 1.0 MHz
25
TA = – 55°C
+ 25°C
20
15
10
5.0
0
5.0
+150°C
– 55°C
+ 25°C
+150°C
4.0
3.0
2.0
1.0
0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 3. Forward Transconductance
versus Gate–Source Voltage
100 k
10 k
1.0 k
Yfs
Yfs
100
1.0 k
VGS(off) = – 2.3 V =
10
Yos
VGS(off) = – 5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
10
120
RDS
96
7.0
72
Cgs
4.0
48
Cgd
24
1.0
0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source Voltage
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data