MMBFU310LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – JFET Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBFU310LT1/D
JFET Transistor
N–Channel
2 SOURCE
MMBFU310LT1
3
GATE
Motorola Preferred Device
1 DRAIN
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBFU310LT1 = 6C
Symbol
VDS
VGS
IG
Value
25
25
10
Symbol
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0)
Gate 1 Leakage Current (VGS = –15 Vdc, VDS = 0)
Gate 2 Leakage Current (VGS = –15 Vdc, VDS = 0, TA = 125°C)
Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0)
Gate–Source Forward Voltage (IG = 10 mAdc, VDS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
  1. FR– 5 = 1.0 0.75 0.062 in.
Symbol
V(BR)GSS
IG1SS
IG2SS
VGS(off)
IDSS
VGS(f)
|Yfs|
|yos|
Ciss
Crss
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Min
– 25
—
—
– 2.5
24
—
10
—
—
—
Max
Unit
—
– 150
– 150
– 6.0
Vdc
pA
nAdc
Vdc
60
mAdc
1.0
Vdc
18
mmhos
250
µmhos
5.0
pF
2.5
pF
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996