MMBF0201N Datasheet, PDF (3/6 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

TYPICAL ELECTRICAL CHARACTERISTICS
MMBF0201N
1.0
0.8
0.6
0.4
125°C
0.2
25°C
– 55°C
0
0
1
2
3
4
5
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
1.5
1.2
0.9
VGS = 4.5 V
0.6
VGS = 10 V
0.3
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
16
14
12
VDS = 16 V
10
ID = 300 mA
8
6
4
2
0
0
160
450
2000
3400
Qg, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
1.0
VGS = 5 V
0.8
VGS = 4 V
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.2
VGS = 3 V
0
0
0.3
0.6
0.9
1.2
1.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
2.4
2.0
1.5
1.0
0.5
0
0
5
10
15
20
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus
Gate–to–Source Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
–25
ID = 250 µA
0
25
50
75
100 125 150
TEMPERATURE (°C)
Figure 6. Threshold Voltage Variance
Over Temperature
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3