MMBF0201N Datasheet, PDF (1/6 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMBF0201N/D
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
™
3 DRAIN
1
GATE
MMBF0201N
Motorola Preferred Device
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
3
1
2
CASE 318–07, Style 21
SOT–23 (TO–236AB)
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
Device
MMBF0201NLT1
MMBF0201NLT3
ORDERING INFORMATION
Reel Size
Tape Width
7″
12 mm embossed tape
13″
12 mm embossed tape
Quantity
3000
10,000
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
R_θJA
TL
Value
20
± 20
300
240
750
225
– 55 to 150
625
260
Unit
Vdc
Vdc
mAdc
mW
°C
°C/W
°C
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
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