MMBF0201N Datasheet, PDF (2/6 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MMBF0201N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V(BR)DSS
20
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
—
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IGSS
—
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
—
—
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Ciss
—
Coss
—
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
td(on)
—
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 Ω)
tr
—
td(off)
—
Fall Time
tf
—
Gate Charge (See Figure 5)
QT
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
Pulsed Current
ISM
—
Forward Voltage(2)
VSD
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
—
—
Vdc
µAdc
—
1.0
—
10
—
±100
nAdc
1.7
2.4
Vdc
Ohms
0.75
1.0
1.0
1.4
450
—
mMhos
45
—
pF
25
—
5.0
—
2.5
—
ns
2.5
—
15
—
0.8
—
1400
—
pC
—
0.3
A
—
0.75
0.85
—
V
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data