BDC05 Datasheet, PDF (3/4 Pages) Motorola, Inc – One Watt High Voltage Transistor

1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
5.0
VCE(sat) @ IC/IB = 10
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
50 70 100
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
TJ = 25°C
Ceb
Ccb
0.5 1.0 2.0 5.0 10 20
50 100 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
BDC05
2.5
2.0
1.5
+ ^IC
IB
10
25°C to 125°C
1.0
0.5 _{RθVC for VCE(sat)}
0
–0.5
–55°C to 25°C
–1.0
–1.5 _{RθVB for VBE}
–2.0
–55°C to 125°C
–2.5
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 4. Temperature Coefficients
100
70
50
30
TJ = 25°C
VCE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Current–Gain — Bandwidth Product
1k
CURRENT LIMIT
500
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
200
1.0 ms
1.0 s
100 µs
100
50
TA = 25°C
20
DUTY CYCLE ≤ 10%
10
10
20
50
100 200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3