BDC05 Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt High Voltage Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BDC05/D
One Watt
High Voltage Transistor
NPN Silicon
COLLECTOR
2
3
BASE
BDC05
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
VCEO
300
Collector – Base Voltage
VCBO
300
Emitter – Base Voltage
VEBO
5.0
Collector Current — Continuous
IC
500
Total Device Dissipation @ TA = 25°C
PD
1.0
Derate above 25°C
8.0
Total Device Dissipation @ TC = 25°C
PD
2.5
Derate above 25°C
50
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R_qJA
125
Thermal Resistance, Junction to Case
R_qJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
Min
Max
Unit
Vdc
300
—
Vdc
300
—
Vdc
5.0
—
µAdc
—
0.01
µAdc
—
10
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1