BDC05 Datasheet, PDF (2/4 Pages) Motorola, Inc – One Watt High Voltage Transistor

BDC05
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
hFE
—
40
—
Collector–Emitter Saturation Voltage(1)
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
—
Vdc
2.0
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
—
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
MHz
60
—
Collector–Base Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Cre
pF
—
2.8
200
VCE = 10 V
100
70
50
TJ = 125°C
25°C
–55°C
30
20
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
0.6
0.5
0.4
0.3
0.2
IC = 10 mA
0.1
TJ = 25°C
IC = 30 mA
IC = 20 mA
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20 30
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data