BCP68T1 Datasheet, PDF (3/6 Pages) Motorola, Inc – MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
TYPICAL ELECTRICAL CHARACTERISTICS
80
70
BCP68T1
TJ = 25°C
0.6
VBE(on) @ VCE = 1.0 V
60
0.4
50
0.2
01.0
VCE(sat) @ IC/IB = 10
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
40
30
0
1.0
2.0
3.0
4.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
25
– 0.8
TJ = 25°C
–1.2
20
–1.6
15
R_θVB for VBE
– 2.0
10
– 2.4
5.0 ₀
5.0
10
15
– 2.8
20
1.0
VR, REVERSE VOLTAGE (VOLTS)
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Base-Emitter Temperature Coefficient
1.0
TJ = 25°C
0.8
0.6
= 1000 mA
0.4 I _C = 10 mA = 50 mA = 100 mA
0.2
0
0.01
= 500 mA
0.1
1.0
10
100
IB, BASE CURRENT (mA)
Figure 7. Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3