BCP68T1 Datasheet, PDF (2/6 Pages) Motorola, Inc – MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

BCP68T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CES
25
—
—
Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
—
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
—
—
Vdc
Collector-Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
—
—
10
µAdc
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
—
10
µAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
hFE
50
85
60
VCE(sat)
—
—
—
—
—
375
—
—
—
0.5
Vdc
Base-Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
—
—
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
fT
—
60
—
MHz
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
300
200
100
10
1.0
TYPICAL ELECTRICAL CHARACTERISTICS
300
TJ = 125°C
= 25°C
= – 55°C
VCE = 1.0 V
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
200
100
70
VCE = 10 V
TJ = 25°C
50
f = 30 MHz
3010
100 200
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain-Bandwidth Product
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data