MRF372 Datasheet, PDF (2/12 Pages) Motorola, Inc – SEMICONDUCTOR TECHNICAL DATA

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS ⁽¹⁾
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D =10 µA)
V_(BR)DSS
68
—
—
Vdc
Zero Gate Voltage Drain Current
(V_DS = 32 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
µAdc
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
µAdc
ON CHARACTERISTICS ⁽¹⁾
Gate Threshold Voltage
(V_DS = 10 V, I_D = 200 µA)
V_GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V_DS = 32 V, I_D = 100 mA)
V_GS(Q)
2.5
3.5
4.5
Vdc
Drain–Source On–Voltage
(V_GS = 10 V, I_D = 3 A)
V_DS(on)
—
0.28
0.45
Vdc
Forward Transconductance
(V_DS = 10 V, I_D = 3 A)
g_fs
—
2.6
—
S
DYNAMIC CHARACTERISTICS ⁽¹⁾
Input Capacitance (Includes Input Matching Capacitance)
(V_DS = 32 V, V_GS = 0 V, f = 1 MHz)
C_iss
—
260
—
pF
Output Capacitance
(V_DS = 32 V, V_GS = 0 V, f = 1 MHz)
C_oss
—
69
—
pF
Reverse Transfer Capacitance
(V_DS = 32 V, V_GS = 0 V, f = 1 MHz)
C_rss
—
2.5
—
pF
FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF372 Narrowband Circuit, 50 ohm system) ⁽²⁾
Common Source Power Gain
(V_DD = 32 V, P_out = 180 W PEP, I_DQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
G_ps
16
17
—
dB
Drain Efficiency
(V_DD = 32 V, P_out = 180 W PEP, I_DQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
—
%
Intermodulation Distortion
(V_DD = 32 Vdc, P_out = 180 W PEP, I_DQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
–35
–31
dBc
Output Mismatch Stress
ψ
(V_DD = 32 Vdc, P_out = 180 W PEP, I_DQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz, V_SWR = 3:1 at all phase angles
of test)
No Degradation in Output Power
TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF372 Broadband Circuit, 50 ohm system) ⁽²⁾
Common Source Power Gain
(V_DD = 32 Vdc, P_out = 180 W PEP, I_DQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
G_ps
—
14.5
—
dB
Drain Efficiency
(V_DD = 32 Vdc, P_out = 180 W PEP, I_DQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
37
—
%
Intermodulation Distortion
(V_DD = 32 Vdc, P_out = 180 W PEP, I_DQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
–31
—
dBc
(1) Each side of device measured separately.
(2) Measured in push–pull configuration.
MRF372
2
MOTOROLA RF DEVICE DATA