MRF372 Datasheet, PDF (1/12 Pages) Motorola, Inc – SEMICONDUCTOR TECHNICAL DATA

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
MRF372
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
32 volt transmitter equipment.
• Typical Narrowband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — –35 dBc
• Typical Broadband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — –31 dBc
• Internally Matched, Controlled Q, for Ease of Use
• Integrated ESD Protection
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
470 – 860 MHz, 180 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375G–04, STYLE 1
NI–860C3
MAXIMUM RATINGS ⁽¹⁾
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Each side of device measured separately.
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
Value
68
– 0.5, +15
17
350
2.0
– 65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.5
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
 Motorola, Inc. 2002