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74HC541A Datasheet, PDF (2/6 Pages) Motorola, Inc – High–Performance Silicon–Gate CMOS | |||
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ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MC54/74HC541A
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD
DC Supply Voltage (Referenced to GND)
â 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
â 0.5 to VCC + 0.5 V
â 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 35
mA
DC Supply Current, VCC and GND Pins
± 75
mA
Power Dissipation in Still Air, Plastic or Ceramic DIPâ
750
mW
SOIC Packageâ
500
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature Range
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
Plastic DIP or SOIC Package
260
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Ceramic DIP)
300
* Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions.
â Derating â Plastic DIP: â 10 mW/_C from 65_ to 125_C
Ceramic DIP: â 10 mW/_C from 100_ to 125_C
SOIC Package: â 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola HighâSpeed CMOS Data Book (DL129/D).
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ RECOMMENDED OPERATING CONDITIONS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Min Max Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
2.0 6.0 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
Operating Temperature Range, All Package Types
â 55 + 125 _C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf Input Rise/Fall Time
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Figure 1)
VCC = 2.0 V 0
VCC = 4.5 V 0
VCC = 6.0 V 0
1000 ns
500
400
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
V â55 to 25°C â¤85°C â¤125°C Unit
VIH
Minimum HighâLevel Input Voltage Vout = 0.1V
|Iout| ⤠20µA
2.0
1.50
1.50 1.50
V
3.0
2.10
2.10 2.10
4.5
3.15
3.15 3.15
6.0
4.20
4.20 4.20
VIL
Maximum LowâLevel Input Voltage Vout = VCC â 0.1V
|Iout| ⤠20µA
2.0
0.50
0.50 0.50
V
3.0
0.90
0.90 0.90
4.5
1.35
1.35 1.35
6.0
1.80
1.80 1.80
VOH
Minimum HighâLevel Output
Voltage
Vin = VIL
|Iout| ⤠20µA
2.0
1.9
4.5
4.4
6.0
5.9
1.9
1.9
V
4.4
4.4
5.9
5.9
Vin = VIL
|Iout| ⤠3.6mA 3.0
2.48
2.34 2.20
|Iout| ⤠6.0mA 4.5
3.98
3.84 3.70
|Iout| ⤠7.8mA 6.0
5.48
5.34 5.20
VOL
Maximum LowâLevel Output
Voltage
Vin = VIH
|Iout| ⤠20µA
2.0
0.1
4.5
0.1
6.0
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
Vin = VIH
|Iout| ⤠3.6mA 3.0
0.26
0.33 0.40
|Iout| ⤠6.0mA 4.5
0.26
0.33 0.40
|Iout| ⤠7.8mA 6.0
0.26
0.33 0.40
MOTOROLA
3â2
HighâSpeed CMOS Logic Data
DL129 â Rev 6
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