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MCM63F837 Datasheet, PDF (1/28 Pages) Motorola, Inc – 256K x 36 and 512K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM | |||
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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256K x 36 and 512K x 18 Bit
FlowâThrough BurstRAM
Synchronous Fast Static RAM
The MCM63F837 and MCM63F919 are 8Mâbit synchronous fast static RAMs
designed to provide a burstable, high performance, secondary cache for the
PowerPC⢠and other high performance microprocessors. The MCM63F837
(organized as 256K words by 36 bits) and the MCM63F919 (organized as 512K
words by 18 bits) are fabricated in Motorolaâs high performance silicon gate
CMOS technology. Synchronous design allows precise cycle control with the
use of an external clock (K).
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)
controlled through positiveâedgeâtriggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63F837 and MCM63F919
(burst sequence operates in linear or interleaved mode dependent upon the state
of LBO) and controlled by the burst address advance (ADV) input pin.
Write cycles are internally selfâtimed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex offâchip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and
synchronous write enable (SW) are provided to allow writes to either individual
bytes or to all bytes. The bytes are designated as âaâ, âbâ, etc. SBa controls DQa,
SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx
are asserted with SW. All bytes are written if either SGW is asserted or if all SBx
and SW are asserted.
For read cycles, a flowâthrough SRAM allows output data to simply flow freely
from the memory array.
The MCM63F837 and MCM63F919 operate from a 3.3 V core power supply
and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs
are JEDEC standard JESD8âA and JESD8â5 compatible.
⢠MCM63F837/MCM63F919â7 = 7 ns Access/8.5 ns Cycle (117 MHz)
MCM63F837/MCM63F919â8 = 8 ns Access/10 ns Cycle (100 MHz)
MCM63F837/MCM63F919â8.5 = 8.5 ns Access/11 ns Cycle (90 MHz)
⢠3.3 V ±5% Core Power Supply, 2.5 V or 3.3 V I/O Supply
⢠ADSP, ADSC, and ADV Burst Control Pins
⢠Selectable Burst Sequencing Order (Linear/Interleaved)
⢠SingleâCycle Deselect Timing
⢠Internally SelfâTimed Write Cycle
⢠Byte Write and Global Write Control
⢠Sleep Mode (ZZ)
⢠Simplified JTAG
⢠JEDEC Standard 100âPin TQFP and 119âBump PBGA Packages
MCM63F837
MCM63F919
TQ PACKAGE
TQFP
CASE 983Aâ01
ZP PACKAGE
PBGA
CASE 999â02
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
8/23/99
©MMOoTtoOrolRa,OIncL.A19F99AST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM63F837â¢MCM63F919
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