PS21963-4E_09 Datasheet, PDF (9/10 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4E/-4AE/-4CE/-4EW
TRANSFER-MOLD TYPE
INSULATED TYPE
[C] Under-Voltage Protection (Upper-side, UVDB)
c1. Control supply voltage rising : After the voltage level reaches UVDBr, the circuits start to operate when next input is applied.
c2. Normal operation : IGBT ON and carrying current.
c3. Under voltage trip (UVDBt).
c4. IGBT OFF in spite of control input signal level, but there is no FO signal outputs.
c5. Under voltage reset (UVDBr).
c6. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state
Control supply voltage VDB
RESET
UVDBr
c1
SET
UVDBt
c3
RESET
c5
Output current Ic
c2
c4
c6
Error output Fo
High-level (no fault output)
Fig. 9 RECOMMENDED MCU I/O INTERFACE CIRCUIT
5V line
MCU
10kΩ
DIP-IPM
UP,VP,WP,UN,VN,WN
Fo
3.3kΩ (min)
VNC(Logic)
Note : The setting of RC coupling at each input (parts shown dotted) depends on the PWM control scheme and the
wiring impedance of the printed circuit board.
The DIP-IPM input section integrates a 3.3kΩ (min) pull-down resistor. Therefore, when using an external
filtering resistor, pay attention to the turn-on threshold voltage.
Fig. 10 WIRING CONNECTION OF SHUNT RESISTOR
DIP-IPM
VNC
N
Wiring inductance should be less than 10nH.
Equivalent to the inductance of a copper
pattern in dimension of width=3mm,
thickness=100µm, length=17mm
Shunt resistor
Please make the GND wiring connection
of shunt resistor to the VNC terminal
as close as possible.
Aug. 2007
9