PS21963-4E_09 Datasheet, PDF (7/10 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4E/-4AE/-4CE/-4EW
TRANSFER-MOLD TYPE
INSULATED TYPE
RECOMMENDED OPERATION CONDITIONS
Symbol
Parameter
Condition
Limits
Min. Typ.
VCC
Supply voltage
Applied between P-N
0
300
VD
Control supply voltage
Applied between VP1-VNC, VN1-VNC
13.5 15.0
VDB
Control supply voltage
∆VD, ∆VDB Control supply variation
tdead
Arm shoot-through blocking time
fPWM
PWM input frequency
Applied between VUFB-U, VVFB-V, VWFB-W
For each input signal, TC ≤ 100°C
TC ≤ 100°C, Tj ≤ 125°C
13.0 15.0
–1
—
1.5
—
—
—
VCC = 300V, VD = VDB = 15V,
fPWM = 5kHz
—
—
IO
Allowable r.m.s. current
P.F = 0.8, sinusoidal PWM,
Tj ≤ 125°C, TC ≤ 100°C
(Note 8) ^{fPWM = 15kHz —}
—
PWIN(on) Allowable minimum input
PWIN(off) ^{pulse width}
0.5
—
(Note 9) 0.5
—
VNC
VNC variation
Between VNC-N (including surge)
–5.0
—
Note 8 : The allowable r.m.s. current value depends on the actual application conditions.
9 : IPM might not make response if the input signal pulse width is less than the recommended minimum value.
Max.
400
16.5
18.5
1
—
20
4.0
2.5
—
—
5.0
Unit
V
V
V
V/µs
µs
kHz
Arms
µs
V
Fig. 7 THE DIP-IPM INTERNAL CIRCUIT
VUFB
VP1
UP
VNC
HVIC
VCC
VUB
UP
UOUT
COM
VUS
IGBT1
Di1
DIP-IPM
P
U
VVFB
VP
VVB
VP
VOUT
IGBT2
Di2
VVS
V
VWFB
WP
VN1
UN
VN
WN
Fo
VNC
VWB
WP
WOUT
VWS
LVIC
UOUT
VCC
UN
VN
WN
Fo
GND
VOUT
WOUT
CIN
VNO
IGBT3
Di3
IGBT4
Di4
IGBT5
Di5
IGBT6
Di6
CIN
7
W
N
Aug. 2007